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d 1 n-channel mosfet p-channel mosfet d 1 d 2 d 2 g 1 s 2 g 2 s1 top view 8 12 3 4 5 6 7 hexfet ? power mosfet fifth generation hexfets from international rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. 07/07/06 generation v technology ultra low on-resistance complimentary half bridge surface mount fully avalanche rated irf7379ipbf n-ch p-ch v dss 30v -30v r ds(on 0.045 ? 0.090 ? www.irf.com 1 absolute maximum ratings lead-free thermal resistance ratings parameter max. units r ja maximum junction-to-ambient 50 c/w
max. n-channel p-channel v sd drain-to-source voltage 30 -30 i d @ t a = 25c continuous drain current, v gs @ 10v 5.8 -4.3 i d @ t a = 70c continuous drain current, v gs @ 10v 4.6 -3.4 i dm pulsed drain current 46 -34 p d @t a = 25c power dissipation 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 5.0 -5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c
so-8 downloaded from: http:///
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. ( see fig. 10 ) notes: n-channel i sd 2.4a, di/dt 73a/s, v dd v (br)dss , t j 150c p-channel i sd -1.8a, di/dt 90a/s, v dd v (br)dss , t j 150c parameter min. typ. max. units conditions n-ch 30 v gs = 0v, i d = 250a p-ch -30 v gs = 0v, i d = -250a n-ch 0.032 reference to 25c, i d = 1ma p-ch -0.037 reference to 25c, i d = -1ma 0.038 0.045 v gs = 10v, i d = 5.8a 0.055 0.075 v gs = 4.5v, i d = 4.9a 0.070 0.090 v gs = -10v, i d =- 4.3a 0.130 0.180 v gs = -4.5v, i d =- 3.7a n-ch 1.0 v ds = v gs , i d = 250a p-ch -1.0 v ds = v gs , i d = -250a n-ch 5.2 v ds = 15v, i d = 2.4a p-ch 2.5 v ds = -24v, i d = -1.8a n-ch 1.0 v ds = 24 v, v gs = 0v p-ch -1.0 v ds = -24v, v gs = 0v n-ch 25 v ds = 24 v, v gs = 0v, t j = 125c p-ch -25 v ds = -24v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage n-p CC 100 v gs = 20v n-ch 25 p-ch 25 n-ch 2.9 p-ch 2.9 n-ch 7.9 p-ch 9.0 n-ch 6.8 p-ch 11 n-ch 21 p-ch 17 n-ch 22 p-ch 25 n-ch 7.7 p-ch 18 l d internal drain inductace n-p 4.0 between lead, 6mm (0.25in.) from l s internal source inductance n-p 6.0 package and center of die contact n-ch 520 p-ch 440 n-ch 180 p-ch 200 n-ch 72 p-ch 93 parameter min. typ. max. units conditions n-ch 3.1 p-ch -3.1 n-ch 46 p-ch -34 n-ch 1.0 t j = 25c, i s = 1.8a, v gs = 0v p-ch -1.0 t j = 25c, i s = -1.8a, v gs = 0v n-ch 47 71 p-ch 53 80 n-ch 56 84 p-ch 66 99 v (br)dss drain-to-source breakdown voltage ? v (br)dss / ? t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance v gs(th) gate threshold voltage g fs forward transconductance i dss drain-to-source leakage current q g total gate charge q gs gate-to-source charge q gd gate-to-drain ("miller") charge t d(on) turn-on delay time t r rise time t d(off) turn-off delay time t f fall time c iss input capacitance c oss output capacitance c rss reverse transfer capacitance

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n-channeli d = 2.4a, v ds = 24v, v gs = 10v p-channeli d = -1.8a, v ds = -24v, v gs = -10v n-channelv dd = 15v, i d = 2.4a, r g = 6.0 ? , r d = 6.2 ? p-channelv dd = -15v, i d = -1.8a, r g = 6.0 ? r d = 8.2 ? n-channelv gs = 0v, v ds = 25v, ? = 1.0mhz p-channelv gs = 0v, v ds = -25v, ? = 1.0mhz n-chp-ch i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage t rr reverse recovery time q rr reverse recovery charge n-channelt j = 25c, i f = 2.4a, di/dt = 100a/s p-channel t j = 25c, i f = -1.8a, di/dt = -100a/s pulse width 300s; duty cycle 2% surface mounted on fr-4 board, 10sec. downloaded from: http:///
www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. typical source-drain diode forward voltage 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 25c a 4.5v j 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 150c a 4.5v j 10 100 4567891 0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 15v 20s pulse width ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a downloaded from: http:///
4 www.irf.com 2 4 6 8 10 0.00 0.04 0.08 0.12 0.16 0.20 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v fig 5. normalized on-resistance vs. temperature fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 4.0a d ? 0 4 8 12 16 0.03 0.04 0.05 0.06 0.07 0.08 r , drain-to-source on resistance v , gate-to-source voltage (v) gs ds (on) id = 5.8a ? downloaded from: http:///
www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 9. typical gate charge vs. gate-to-source voltage fig 8. typical capacitance vs. drain-to-source voltage 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 5 10 15 20 25 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a i = 2.4a v = 24v d ds for test circuit see figure 11 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
6 www.irf.com fig 13. typical transfer characteristics fig 12. typical output characteristics fig 11. typical output characteristics fig 14. typical source-drain diode forward voltage 1 10 100 0.1 1 10 10 0 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 25c j 1 10 100 0.1 1 10 10 0 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v j 1 10 100 4567891 0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -15v 20s pulse width ds 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1. 5 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) downloaded from: http:///
www.irf.com 7 fig 15. normalized on-resistance vs. temperature fig 16. typical on-resistance vs. drain current fig 17. typical on-resistance vs. gate voltage 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -3.0a d 0 2 4 6 8 10 12 14 0.00 0.10 0.20 0.30 0.40 0.50 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v 0 4 8 12 16 0.06 0.08 0.10 0.12 0.14 0.16 r , drain-to-source on resistance -v , gate-to-source voltage (v) gs ds (on) id = -4.3a ? ? downloaded from: http:///
8 www.irf.com fig 19. typical gate charge vs. gate-to-source voltage fig 18. typical capacitance vs. drain-to-source voltage fig 20. maximum effective transient thermal impedance, junction-to-ambient 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 5 10 15 20 25 q , total gate charge (nc) g a -v , gate-to-source voltage (v) gs i = -3.0a v = -24v ds d for test circuit see figure 22 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 9 so-8 package outlinedimensions are shown in milimeters (inches) so-8 part marking information

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10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualifications standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2006 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in milimeters (inches) downloaded from: http:///

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